Effect of encapsulation in a VDMOSFET under X-ray beams used in medical diagnosis

Abstract

The electronic device MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is known as an ionizing radiation detector, mainly in radiotherapy beams. Recently, a type of MOSFET has also been used in medical diagnostic beams, which is an energy range significantly lower than the energy range normally used in radiotherapy. This work presents a scientific study of the use of a VDMOSFET (VD = Vertical Double Diffused) and its response to X-ray beams normally used in medical diagnosis. The VDMOSFET chosen for the analysis is manufactured with two different types of encapsulation and that is what allowed us to develop this work. The results showed that, although the silicon chip is exactly the same, that is, the electronic device itself has identical electrical characteristics the response of each one with their respective encapsulations is different. The encapsulation effect suggests that the VDMOSFET can be used in X-ray tube parameters measurement processes applied to medical diagnosis, resulting in technological advances in the area of ​​ ionizing radiation applied in medicine.